Investigators at the University of Chicago Pritzker School of Molecular Engineering have identified an unexpected quantum behavior in the two-dimensional material Fe5GeTe2, according to findings published in Science Advances. The researchers, led by Assistant Professor Shuolong Yang, observed that the material can enter a charge-ordered state in which large numbers of electrons move collectively at extremely slow speeds while still preserving quantum coherence.
The team used angle-resolved photoemission spectroscopy to examine the material’s electronic properties. By focusing an ultraviolet laser onto a targeted area, they detected the formation of a flat electronic band, a configuration that prevents electrons from moving through the material at their normal speeds. Rather than traveling individually, the electrons behave collectively in what scientists describe as a quantum many-body phenomenon. Yang likened this effect to water flowing over a waterfall, where a flat slope produces slower movement compared to a steep incline.
The discovery challenges existing theoretical predictions about how Fe5GeTe2 functions and raises questions about the material’s underlying magnetic interactions. Fe5GeTe2 belongs to a family of van der Waals magnets that can be formed into atomically thin layers. Because the material can exist in multiple magnetic states, researchers see potential applications in memory storage technology.
A notable aspect of the findings involves the temperature range at which the behavior occurs. While many quantum effects require conditions near absolute zero, the coherent electron behavior persisted at temperatures up to 100 degrees above absolute zero. Although this remains significantly below room temperature, it represents a relatively high threshold compared with comparable quantum materials, making potential practical applications more feasible.
The researchers plan to investigate whether targeted laser pulses can switch the material between different quantum states, potentially enabling its use in advanced memory devices. They will also examine whether the observed properties remain when Fe5GeTe2 is reduced to a single atomic layer thickness.
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